首页> 外文期刊>Mutation Research: International Journal on Mutagenesis, Chromosome Breakage and Related Subjects >Characterization of gamma irradiation-induced deletion mutations at a selectable locus in Arabidopsis.
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Characterization of gamma irradiation-induced deletion mutations at a selectable locus in Arabidopsis.

机译:γ射线辐射诱导的拟南芥中一个可选位点的缺失突变的表征。

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Seeds of transgenic Arabidopsis, containing a negatively selectable suicide marker, a 35Stms2 construct introduced as a transgene, were gamma-irradiated at a range of doses from 20-120 krad. Batches of M2 seeds, from M1 plants irradiated at doses of 40, 45 and 60 krad, were screened by germinating them on medium containing NAM under conditions that selectively inhibited growth of plants expressing the tms2 gene product. Nine candidate loss-of-transgene mutants were isolated. The frequency of such mutations (0.0125 to 0.025%) did not vary significantly with irradiation dose or M1 pool size. DNA from the mutants and the parent was hybridized in Southern blots, using probes complementary to various regions of the transgene. All nine mutants were null for both the tms2 coding sequence and the 35S promoter. Six of the nine mutants were null for the entire transgene construct of 9 kbp. DNA from one mutant contained one of the T-DNA borders and gave a hybridization pattern consistent with a deletion at least 5 kbp. The two remaining mutant lines gave identical patterns of hybridization, consistent with a 5.6-kbp internal deletion within the transgene. From the Southern blots, and on the basis of lineage, the nine lines represent the progeny of either seven or eight independent mutations. We have established conditions capable of producing deletion mutations of at least 5 kbp, but without apparently introducing small deletions or rearrangements. Such deletion mutations are ideally suited for cloning by subtractive hybridization, and should also be readily detectable by RFLP analysis, facilitating map-based cloning procedures. Copyright 1998 Elsevier Science B.V. All rights reserved.
机译:以20-120 krad的剂量范围对γ射线辐照转基因拟南芥种子,该种子含有负选择性自杀标记,即作为转基因引入的35Stms2构建体。在选择性抑制表达tms2基因产物的植物生长的条件下,通过在含有NAM的培养基上使种子发芽,筛选出以40、45和60 krad剂量照射的M1植物的M2种子批次。分离了九个候选转基因丢失突变体。此类突变的频率(0.0125至0.025%)不会随辐照剂量或M1库大小的变化而显着变化。使用与转基因各个区域互补的探针,在Southern印迹中杂交来自突变体和亲本的DNA。对于tms2编码序列和35S启动子,所有9个突变体均无效。九个突变体中的六个对整个9 kbp的转基因构建体无效。来自一个突变体的DNA含有一个T-DNA边界,并给出了与至少5kbp的缺失一致的杂交模式。剩下的两个突变体系给出了相同的杂交模式,与转基因中的5.6-kbp内部缺失相一致。根据Southern印迹,并基于谱系,九个品系代表七个或八个独立突变的后代。我们已经建立了能够产生至少5kbp的缺失突变的条件,但是显然没有引入小的缺失或重排。此类缺失突变非常适合通过减性杂交进行克隆,并且还应易于通过RFLP分析检测,从而有利于基于图的克隆程序。版权所有1998 Elsevier Science B.V.保留所有权利。

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