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Modelling grain growth in the presence of Zener drag: application for Fe-3% Si

机译:齐纳阻力作用下晶粒长大的模型:Fe-3%Si的应用

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摘要

The presence of AlN and MnS inhibitors in Fe-3% Si sheets, grade Hi-B, permits the development of Goss texture by the sudden and rapid growth of small grains possessing a {110}〈001〉 orientation. This behavior is not in good agreement with the classical laws of secondary recrystallization. In the present study, first the minimum critical radius of the grain which is susceptible to growth is determined in relation to orientation and grain size neighborhood. Moreover, the necessity to define a maximum critical radius for the neighborhood is established. Consideration of these two radii permits the exploration of possible growth sequences for small grains.
机译:Fe-3%Si薄板(Hi-B级)中存在AlN和MnS抑制剂,可通过突然且快速生长具有{110} 〈001〉取向的小晶粒而使高斯织构发展。这种行为与二次重结晶的经典定律并不完全一致。在本研究中,首先确定晶粒的最小临界半径,该最小临界半径与取向和晶粒尺寸邻域有关。此外,确立了为邻域定义最大临界半径的必要性。考虑这两个半径可以探索小晶粒可能的生长顺序。

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