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首页> 外文期刊>Modern Physics Letters, B. Condensed Matter Physics, Statistical Physics, Applied Physics >A phenomenological study of the Si-H infrared spectra in porous and amorphous silicon
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A phenomenological study of the Si-H infrared spectra in porous and amorphous silicon

机译:多孔和非晶硅中Si-H红外光谱的现象学研究

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It is observed that Si-H stretching mode vibrational spectra in porous silicon and in hydrogenated amorphous silicon: (i) is broad with a full width at half maxima of approx= 20-40 cm~(-1); (ii) has a long low energy tail; and (iii) has a peak value shifted by 100 cm~(-1) from 2000 cm~(-1) (crystalline silicon case) to 2100 cm~(-1). We propose a simple phenomenological model to account for the above features. The model invokes a narrow distribution in the Si-H bond distances. The first feature namely the broadening can be satisfactorily explained. although our model yields a low energy tail, it is not as pronounced as the experimental tail. Our model can be shown to be consistent with the third feature, namely the peak shift.
机译:观察到在多孔硅和氢化非晶硅中的Si-H拉伸模式振动谱:(i)宽,半峰全宽约为20-40cm-1(-1); (ii)具有低能量的长尾巴; (iii)的峰值从2000 cm〜(-1)(晶体硅壳)移到2100 cm〜(-1)了100 cm〜(-1)。我们提出一个简单的现象学模型来说明上述特征。该模型在Si-H键距中调用窄分布。可以令人满意地解释第一个特征,即加宽。尽管我们的模型产生的能量低尾巴,但不如实验尾巴明显。我们的模型可以证明与第三个特征,即峰移一致。

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