We make a comparative study of the optical and structural characteristics of two InxGa1-xP (x approximate to 0.5) films nearly lattice matched to GaAs, (here referred to as disordered type 1 sample (S1) and ordered type 2 sample (S2)). The films were grown by liquid phase epitaxy (LPE). Photoluminescence (PL) measurements were performed in a wide temperature and exciting power density range for different polarization of the emitted radiation along the [110] and [110] directions. Observations suggest that the InxGa1-xP layer in sample 1 is disordered, as commonly obtained in LPE growth, while in sample 2 at least a partially spontaneously ordered layer was obtained. Moreover, the energy position of the 20 K PL peak is close to the predicted band gap energy for the InGaP2 material ordered in the CuPt phase. [1]. [References: 6]
展开▼
机译：我们对两块几乎与GaAs晶格匹配的InxGa1-xP（x约0.5）薄膜的光学和结构特性进行了比较研究（这里称为无序1型样品（S1）和有序2型样品（S2）） 。通过液相外延（LPE）使膜生长。对于沿[110]和[110]方向发出的辐射的不同偏振，在较宽的温度和激发功率密度范围内执行光致发光（PL）测量。观察结果表明，样品1中的InxGa1-xP层是无序的，这是LPE生长中常见的现象，而样品2中至少获得了部分自发的有序层。此外，20 K PL峰的能量位置接近在CuPt相中订购的InGaP2材料的预测带隙能量。 [1]。 [参考：6]
展开▼
