Chemical bath deposition: A promising technology to build low cost solar cells

摘要

Following the model of DeVos and Pauwels (1981), we calculated the spectral factor of efficiencies (eta (1)) for n(+)-p or n(+)-i-p heterojunctions that can be formed by different thin absorber materials (p-type or intrinsic(i)) with n(+)-type US thin films produced by conversion of chemically deposited Us thin films by doping with Cl or In as reported before. The materials with eta (1) comparable to that of CulnSe(2) (Eg, 1.01 eV: 57%) are AgBiS2 (Eg, 0.9 eV: 56%), Cu2SnS3 (Eg, 0.91 eV: 57%), PbSnS3 (Eg, 1.05 eV: 57%), PbSb2S4 (Eg, 1.13 eV: 56%). [References: 5]