We have derived the dispersion relation for double GaAs semiconductor grating, using nonlinear boundary condition approach. The grating medium is assumed to nonmagnetic and it has sinusoidal undulation of angular frequency omega on both side of the film. In the limit when plasma wavevector k(p) is greater than k(parallel to) wavevector of the wave, we obtained two branches in the dispersion curve which corresponds to electrostatic charge disposition on the two sides of grating. In the limiting case k(p)), the grating radiate the electromagnetic field in the vicinity area. [References: 16]
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