首页> 外文期刊>Modern Physics Letters, B. Condensed Matter Physics, Statistical Physics, Applied Physics >SURFACE LOCALIZATION OF ELECTRONS IN ULTRATHIN CRYSTALLINE STRUCTURES
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SURFACE LOCALIZATION OF ELECTRONS IN ULTRATHIN CRYSTALLINE STRUCTURES

机译:超薄晶体结构中电子的表面定位

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Electron subsystem of ultrathin films was analyzed using Green’s function method including quantum size effect and effect of boundaries on Hamiltonian parameters. We have calculated basic physical properties of electrons in crystalline films: energy spectra, possible states, space distribution of electrons and the position of Fermi level, which enabled the complete insight into the thermodynamic or conducting characteristics of observed film-structure. The comparison with crystal bulk have shown that electronic properties of the materials are strongly influenced by both the sample dimensions and boundary conditions. The numerical calculations performed for very thin crystalline metallic-like films show that localized states and spatial distribution of the (quasi)free electrons might be manipulated by varying the surface parameters which is significant for operation of devices based on thin films.
机译:使用格林函数方法分析了超薄膜的电子子系统,包括量子尺寸效应和边界对哈密顿参数的影响。我们已经计算出了结晶膜中电子的基本物理特性:能谱,可能的状态,电子的空间分布以及费米能级的位置,这使人们能够完全了解所观察到的膜结构的热力学或传导特性。与晶体块的比较表明,材料的电子性能受到样品尺寸和边界条件的强烈影响。对非常薄的晶体状金属薄膜进行的数值计算表明,可以通过改变表面参数来控制(准)自由电子的局部状态和空间分布,这对于基于薄膜的器件的操作非常重要。

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