Effect of optical radiation on millimeter-wave characteristics and avalanche noise generation in double-drift IMPATT diodes based on opto-sensitive semiconductors

摘要

RF properties and avalanche noise generation in optosensitive GaAs, InP, GaInAs, and GaInAsP double-drift IMPATT diodes with and without optical injection have been studied. The optimum frequency and RF characteristics undergo sufficient variation with increase of intensity of optical radiation, which opens the prospects for RF tuning and its use as a low-noise optical detector.