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A low-power, micromachined, double spiral hotplate for MEMS gas sensors

机译:用于MEMS气体传感器的低功耗微加工双螺旋加热板

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This paper presents the design, fabrication and reliability testing of a double spiral platinum-based MEMS hotplate for gas sensing applications. The structure of MEMS hotplate consists of a 0.7 mu m-thick thermally grown SiO2 membrane of size 120 mu m x 120 mu m over which a double spiral platinum resistor is laid out. The hotplate membrane is supported by its four arms connected to the Si-substrate. The design and simulation of the hotplate structure was carried out using MEMS-CAD Tool COVENTORWARE. Based on the design, a double spiral platinum resistor of 103 Omega is fabricated on SiO2 membrane using lift-off technique. The platinum deposition is carried out using DC sputtering technique. Bulk micromachining of Si is done from front side of the structure to create the suspended SiO2 membrane. The temperature coefficient of resistance (TCR) of platinum is measured and found to be 2.19 x 10(-3)/ degrees C. The TCR value is used for temperature estimation of the hotplate. The test results show that the microhotplate consumes only 20 mW power when heated up to 500 degrees C. For reliability testing of fabricated structure, the hotplate is continuously operated at 300 degrees C for 1.8 h. Also, it can sustain at least 61 cycles pulse-mode operation at 530 degrees C with ultra-low resistance and temperature drifts. The structure can sustain a maximum temperature and current of 611 degrees C and 11.55 mA respectively without any damage.
机译:本文介绍了用于气体传感应用的双螺旋铂基MEMS电磁炉的设计,制造和可靠性测试。 MEMS加热板的结构由0.7微米厚的热生长SiO2膜组成,尺寸为120μmx 120μm,在其上布置了双螺旋铂电阻器。热板膜由连接到Si基板的四个臂支撑。使用MEMS-CAD Tool COVENTORWARE进行了热板结构的设计和仿真。在此设计的基础上,采用剥离技术在SiO2膜上制备了103Ω的双螺旋铂电阻。使用DC溅射技术进行铂沉积。从结构的正面进行硅的整体微细加工,以形成悬浮的SiO2膜。测量铂的电阻温度系数(TCR),发现其为2.19 x 10(-3)/摄氏度。TCR值用于热板的温度估算。测试结果表明,微加热板在加热到500摄氏度时仅消耗20 mW的功率。为了对预制结构进行可靠性测试,该加热板在300摄氏度下连续运行1.8小时。而且,它可以在530摄氏度下维持至少61个周期的脉冲模式操作,并具有超低的电阻和温度漂移。该结构可以承受的最高温度和电流分别为611摄氏度和11.55 mA,而没有任何损坏。

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