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An eco-friendly method for reclaimed silicon wafers from a photovoltaic module: from separation to cell fabrication

机译:从光伏组件中回收硅晶片的环保方法:从分离到电池制造

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摘要

A sustainable method for reclaiming silicon (Si) wafers from an end-of-life photovoltaic module is examined in this paper. A thermal process was employed to remove ethylene vinyl acetate and the back-sheet. We found that a ramp-up rate of 15 degrees C min(-1) and an annealing temperature of 480 degrees C enabled recovery of the undamaged wafer from the module. An ecofriendly process to remove impurities from the cell surface was developed. We also developed an etching process that precludes the use of hydrofluoric (HF) acid. The method for removing impurities consists of three steps: (1) recovery of the silver (Ag) electrode using nitric acid (HNO3); (2) mechanical removal of the anti-reflecting coating, emitter layer, and p-n junction simultaneously; and (3) removal of the aluminum (Al) electrode using potassium hydroxide (KOH). The reclaimed wafers showed properties that are almost identical to those of commercial virgin wafers: 180 mu m average thickness; 0.5 and 3.7 Omega cm minimum and maximum resistivities, respectively; and 1.69 mu s average carrier lifetime. In addition, cells fabricated with the reclaimed wafers showed an efficiency equivalent to that of the initial cells.
机译:本文研究了一种从报废的光伏模块中回收硅晶片的可持续方法。采用热处理除去乙烯乙酸乙烯酯和底片。我们发现15℃min(-1)的升温速率和480℃的退火温度能够从模块中回收未损坏的晶片。开发了一种从细胞表面去除杂质的环保工艺。我们还开发了一种蚀刻工艺,可避免使用氢氟酸(HF)。去除杂质的方法包括三个步骤:(1)使用硝酸(HNO3)回收银(Ag)电极; (2)同时机械去除抗反射涂层,发射极层和p-n结; (3)使用氢氧化钾(KOH)去除铝(Al)电极。回收的晶片显示出的特性几乎与市售的原始晶片相同:平均厚度为180微米;最小和最大电阻率分别为0.5和3.7Ω厘米;平均载流子寿命为1.69亩。另外,用回收晶片制造的电池显示出与初始电池等效的效率。

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