Preparation of SnS Thin Films by MOCVD Method Using Single Source Precursor, Bis(3-mercapto-l-prdpanethiolato) Sn(II)

摘要

SnS thin films were deposited on glasses through metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions, using bis(3-mercapto-l-propanethiolato) tin(II) precursor without toxic H2S gas. The MOCVD process was carried out in the temperature range of 300-400 °C and the average grain size in fabricated SnS films was about 500 nm. The optical band gap of the SnS film was about 1.3 eV which is in optimal range for harvesting solar radiation energy. The precursor and SnS films were characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, DIP-EI mass spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.