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首页> 外文期刊>Inorganica Chimica Acta >Parallel disulfido bridges in bi- and poly-nuclear transition metal compounds: Bonding flexibility induced by redox chemistry
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Parallel disulfido bridges in bi- and poly-nuclear transition metal compounds: Bonding flexibility induced by redox chemistry

机译:双核和多核过渡金属化合物中的平行二硫键桥:氧化还原化学诱导的键合柔性

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We recently studied an elongated S-4(2-) rectangle bridging transition metals such as Ir, Rh, Cu, or Fe and found that its formation is related to the oxidation of parallel S-2(2-) molecules. The removal of two electrons can occur either externally or by an internal metal-ligand redox process that implies depopulation of the high-lying S-4 sigma(*) MO and population of a lower metal level. Thus, the interaction may be described as metal back-donation. However, sufficiently electropositive metals can more easily reach higher oxidation states and this reverses the direction of the two-electron interaction. In such a case, the system may be viewed as formed by two uncoupled disulfides donating an additional electron pair to the metals. In this paper, we analyze the aspects of the 2S(2)(2-)/S-4(2-) dichotomy through DFT calculations and qualitative MO analysis of the known bimetallic MS4M cores having either triple-decker (TD) or chair-type structures. We correlate the extent of the disulfide coupling with the nature (electronegativity) of the terminal metal fragments (the metals range from Group IV to X) beside their electron configuration. We find that the formation of an S-4(2-) unit is favored by metals which cannot stabilize high oxidation states (e. g. Fe(IV) or Cu(III)), whereas the two S-2(2-) units remain substantially uncoupled with early transition metal in high oxidation states (e.g. Ti(IV)).
机译:我们最近研究了细长的S-4(2-)矩形桥接过渡金属,例如Ir,Rh,Cu或Fe,发现其形成与平行S-2(2-)分子的氧化有关。两个电子的去除可以在外部发生,也可以通过内部金属-配体氧化还原过程发生,这意味着高位S-4 sigma(*)MO的数量减少,金属含量较低。因此,该相互作用可被描述为金属背捐赠。然而,足够的正电金属可以更容易地达到更高的氧化态,这使二电子相互作用的方向相反。在这种情况下,该系统可以看作是由两个未偶联的二硫键向金属提供额外的电子对而形成的。在本文中,我们通过DFT计算和已知的具有三层(TD)或椅子的双金属MS4M磁芯的DFT计算和定性MO分析来分析2S(2)(2-)/ S-4(2-)二分法的各个方面型结构。我们将二硫键的偶联程度与末端金属片段(金属的范围从IV族到X)的电子构型相关(其性质(电负性))。我们发现,不能稳定高氧化态的金属(例如Fe(IV)或Cu(III))有利于形成S-4(2-)单元,而保留两个S-2(2-)单元与处于高氧化态的早期过渡金属(例如Ti(IV))基本上不偶联。

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