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Evaluation of the RF heating of a generic deep brain stimulator exposed in 1.5T magnetic resonance scanners

机译:评估1.5T磁共振扫描仪中暴露的通用深部脑刺激器的RF加热

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The radio frequency (RF) electromagnetic field of magnetic resonance (MR) scanners can result in significant tissue heating due to the RF coupling with the conducting parts of medical implants. The objective of this article is to evaluate the advantages and shortcomings of a new four-tier approach based on a combined numerical and experimental procedure, designed to demonstrate safety of implants during MR scans. To the authors' best knowledge, this is the first study analyzing this technique. The evaluation is performed for 1.5T MR scanners using a generic model of a deep brain stimulator (DBS) with a straight lead and a helical lead. The results show that the approach is technically feasible and provides sound and conservative information about the potential heating of implants. We demonstrate that (1) applying optimized tools results in reasonable uncertainties for the overall evaluation; (2) each tier reduces the overestimation by several dB at the cost of more demanding evaluation steps; (3) the implant with the straight lead would cause local temperature increases larger than 18 °C at the RF exposure limit for the normal operating mode; (4) Tier 3 is not sufficient for the helical implant; and (5) Tier 4 might be too demanding to be performed for complex implants. We conclude with a suggestion for a procedure that follows the same concept but is between Tier 3 and 4. In addition, the evaluation of Tier 3 has shown consistency with current scan practice, namely, the resulting heat at the lead tip is less than 3.5 °C for the straight lead and 0.7 °C for the helix lead for scans at the current applied MR scan restrictions for deep brain stimulation at a head average SAR of 0.1W/kg.
机译:磁共振(MR)扫描仪的射频(RF)电磁场会由于与医疗植入物的导电部件的射频耦合而导致明显的组织发热。本文的目的是基于组合的数值和实验程序,评估一种新的四层方法的优缺点,该方法旨在证明MR扫描期间植入物的安全性。据作者所知,这是首次分析此技术的研究。对于1.5T MR扫描仪,使用具有直导线和螺旋导线的通用型深部脑刺激器(DBS)模型进行评估。结果表明,该方法在技术上是可行的,并提供了有关植入物潜在发热的可靠且保守的信息。我们证明(1)应用优化工具会为整体评估带来合理的不确定性; (2)每层降低了高估几分贝,但代价是要求更高的评估步骤; (3)在正常工作模式的射频暴露极限下,带有直引线的植入物会导致局部温度升高大于18°C; (4)第3层不足以进行螺旋植入; (5)对于复杂的植入物,可能无法执行第4层。最后,我们提出了一个建议,该程序遵循相同的概念,但在方法3和方法4之间。此外,方法3的评估显示与当前扫描实践一致,即,引线末端的最终热量小于3.5在当前施加的MR扫描限制条件下,对于直脑铅为°C,对于螺旋脑铅为0.7°C,对于头部平均SAR为0.1W / kg的深部脑刺激,该限制为。

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