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首页> 外文期刊>International Journal of Mechanical Sciences >The influence of dislocation distribution density on curvature and interface stress in epitaxial thin films on a flexible substrate
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The influence of dislocation distribution density on curvature and interface stress in epitaxial thin films on a flexible substrate

机译:位错分布密度对柔性衬底上外延薄膜曲率和界面应力的影响

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摘要

We consider the problem of relaxation of coherency stresses by lattice misfit dislocations, which can be represented as edge dislocations uniformly distributed along the interface, and can be associated with the concept of dislocation density according to the mathematical theory of continuous distributions of dislocations. The orientation of dislocation line density is constrained within the plane of epitaxial layer and the Burgers vector density within the same plane is considered as a local variable of the problem. Under the external stress-free conditions the system is then enforced to satisfy the boundary conditions according to the geometry of the epitaxial film and the substrate together with the corresponding compatibility conditions. The dislocation density tensor is then connected with the deformation and rotation tensors and subsequently with the curvature of the system. The closed form solution of the problem is given for a generic one-dimensional case.
机译:我们考虑了晶格失配位错的相干应力松弛问题,该问题可以表示为沿界面均匀分布的边缘位错,并且可以根据位错连续分布的数学理论与位错密度的概念相关联。位错线密度的方向被限制在外延层的平面内,并且同一平面内的Burgers矢量密度被认为是问题的局部变量。然后,在无外部应力的条件下,根据外延膜和基板的几何形状以及相应的相容性条件,使系统满足边界条件。然后,位错密度张量与变形和旋转张量以及随后与系统的曲率连接。对于一般的一维情况,给出了问题的封闭形式解决方案。

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