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Fluorescence imaging of the desorption of dye from fused silica versus silica gel

机译:熔融硅胶与硅胶上染料脱附的荧光成像

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The desorption rate constants for a cationic dye from strong adsorption sites are compared for the same chromatographic interface but for two different substrates, fused silica and chromatographic silica gel. The dye is 1, 1'-didodecyl-3,3,3'3'-tetramethylindocarbocyanine perchlorate (DiI). The interface consists of acetonitrile and a hydrocarbon monolayer (C-8) covalently bound to the silica substrate. To measure slow desorption from fused silica, fluorescence imaging combined with correlation spectroscopy is used. To measure slow desorption from silica gel, fluorescence movies of silica gel particles are used. In both cases, the results show that there are two types of slow desorption processes on time scales exceeding 1 s. The desorption time from one type of site is within an experimental error of 7 s for both silica substrates. The adsorption kinetics for this type of site are slow, and the equilibrium population of DiI on these sites is comparable to that for DiI weakly adsorbed to the hydrocarbon monolayer. For the second type of site, for fused silica, the population of DiI is even higher than that of weakly adsorbed DiI, and the desorption time constant is similar to2 min, although this is likely shortened by photobleaching. For silica gel, the relative population of DiI on this ultrastrong site is more than an order of magnitude lower, and the desorption time constant is 4.0 +/- 0.1 min. Both silica substrates thus show two types of sites whose time constants agree within experimental error, suggesting that the strong adsorption sites on fused silica are chemically the same as those on chromatographic silica gel. [References: 17]
机译:对于相同的色谱界面,但对于两种不同的底物,熔融二氧化硅和色谱硅胶,比较了阳离子染料从强吸附位点处的解吸速率常数。染料是1,1'-二癸基-3,3,3'3'-四甲基吲哚羰花青高氯酸盐(DiI)。该界面由乙腈和共价结合到二氧化硅基质上的烃单层(C-8)组成。为了测量熔融石英的缓慢解吸,可以使用荧光成像和相关光谱技术。为了测量从硅胶的缓慢解吸,使用了硅胶颗粒的荧光膜。在这两种情况下,结果均表明在超过1 s的时间范围内存在两种类型的缓慢解吸过程。对于两种二氧化硅基质,从一种类型的位点解吸的时间均在7 s的实验误差范围内。这种类型的位点的吸附动力学很慢,并且在这些位点上的DiI的平衡种群与弱吸附到烃单层的DiI的平衡种群相当。对于第二种类型的位点,对于熔融石英,DiI的数量甚至比弱吸附的DiI的数量更高,并且解吸时间常数接近2分钟,尽管光漂白可能会缩短它。对于硅胶,该超强位点上的DiI相对数量要低一个数量级以上,并且解吸时间常数为4.0 +/- 0.1分钟。因此,两种二氧化硅基质都显示出两种类型的位点,其时间常数在实验误差范围内一致,这表明,熔融石英上的强吸附位在化学上与色谱硅胶上的强。 [参考:17]

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