Dendrite Integration Mimicked on Starch-Based Electrolyte-Gated Oxide Dendrite Transistors

摘要

Emulation of dendrite integration on brain-inspired hardware devices is of great significance for neuromorphic engineering. Here, solution-processed starch-based electrolyte films are fabricated, demonstrating strong proton gating activities. Starch gated oxide dendrite transistors with multigates are fabricated, exhibiting good electrical performances. Most importantly, dendrite modulation, spatiotemporal dendrite integration, and linear/superlinear dendrite algorithm are demonstrated on the proposed dendrite transistor. Furthermore, a low energy consumption of similar to 1.2 pJ is obtained for triggering a synaptic response on the dendrite transistor. Accordingly, the signal-to-noise ratio is still as high as similar to 2.9 indicating a high sensitivity of similar to 4.6 dB. Such artificial dendrite transistors have potential applications in brain-inspired neuromorphic platforms.