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Probing Evolution of Local Strain at MoS2-Metal Boundaries by Surface-Enhanced Raman Scattering

机译:表面增强拉曼散射探测MOS2金属边界局部应变的演变

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摘要

Strain usually exists in two-dimensional (2D) materials and devices, and its presence drastically modulates their properties. When 2D materials interface with noble metals, local strain and surface plasmon can couple at the metal-2D material boundaries, delivering a lot of intriguing phenomena. Current studies are mostly focused on the explanations of these strain-related phenomena based on a static point of view. Although strain can typically be relaxed in many environments, the time evolution of strain at metal-2D material interfaces remains largely unknown. In this work, we investigate the evolution of local strain at Ag-MoS2 boundaries by surface-enhanced Raman scattering. With the split of MoS2 Raman peaks as an indicator of local strain, it is found that the originally localized strain at Ag-MoS2 boundaries evolves and relaxes with time into a delocalized strain in MoS2 plane. The time to start the strain relaxation depends on the number of layers of MoS2 flakes, suggesting that the relaxation may result from the mechanical instability of the interface between the topmost MoS2 layer and the underlying materials. The relaxation occurs in a certain period of time, i.e., similar to 70 days for 1L and similar to 30 days for 3L. Accompanying the strain relaxation, surface sulfurization of Ag also occurs, a process that reduces the strength of locally enhanced electric field. Our results not only provide a deep understanding of strain evolution at metal-MoS2 interfaces but also shed light on the optimization of MoS2-based device fabrications.
机译:应变通常存在于二维(2D)材料和装置中,其存在急剧调节其性质。当具有贵金属的2D材料界面时,局部应变和表面等离子体可以在金属-2D材料边界上耦合,从而提供很多有趣的现象。目前的研究主要集中在基于静态观点来解释这些与这些应变相关现象的解释。尽管在许多环境中通常可以放松菌株,但金属-2D材料界面的应变的时间延伸仍然很大程度上是未知的。在这项工作中,我们通过表面增强拉曼散射调查局部应变对局部应变的演变。随着MOS2拉曼峰的分开作为局部应变的指示,发现AG-MOS2边界的最初局部应变随着时间的推移和放松在MOS2平面中的分层菌株中。开始应变弛豫的时间取决于MOS2薄片的层数,表明松弛可能是由于顶部MOS2层和底层材料之间的界面的机械不稳定性导致。弛豫发生在一段时间内,即类似于1L的70天,并且类似于3L的30天。伴随应变松弛,AG的表面硫化也发生,这是一种降低局部增强电场强度的过程。我们的结果不仅对金属-MOS2接口进行了对应变演变的深刻理解,而且还对基于MOS2的器件制造的优化揭示了光。

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  • 来源
    《ACS applied materials & interfaces》 |2018年第46期|共9页
  • 作者单位

    Univ Sci &

    Technol Beijing Sch Math &

    Phys Beijing Key Lab Magnetophotoelect Composite &

    Int Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China;

    Univ Sci &

    Technol Beijing Sch Math &

    Phys Beijing Key Lab Magnetophotoelect Composite &

    Int Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China;

    Univ Sci &

    Technol Beijing Sch Math &

    Phys Beijing Key Lab Magnetophotoelect Composite &

    Int Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China;

    Tsinghua Univ Sch Mat Sci &

    Engn State Key Lab New Ceram &

    Fine Proc Beijing 100084 Peoples R China;

    Univ Sci &

    Technol Beijing Sch Math &

    Phys Beijing Key Lab Magnetophotoelect Composite &

    Int Beijing Adv Innovat Ctr Mat Genome Engn Beijing 100083 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    molybdenum disulfide; Raman peak splitting; strain relaxation; surface-enhanced Raman scattering; Ag nanoparticles;

    机译:二硫化钼;拉曼峰分裂;应变松弛;表面增强拉曼散射;Ag纳米颗粒;

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