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Emission dynamics of dark and bright excitons in CdSe/ZnS nanocrystals

机译:CdSe / ZnS纳米晶体中暗和亮激子的发射动力学

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The CdSe/ZnS nanocrystals (NCs) forming the wurtzite structure were prepared by using a colloidal chemical method for the investigation of the temperature dependence of the band edge emission. The size of CdSe NCs was estimated with the energy band gap obtained from the absorption measurement. The PL spectra and the time-resolved spectra were measured over a broad temperature range from 4 K to 290 K. There was a red shift of 50 meV in energy band gap in the temperature range due to the temperature dependent electron lattice interaction and thermal expansion. The time-resolved spectra in the low temperature regime up to 50 K exhibited a single exponential decay of the band edge emission from thermal equilibrium between the bright and the dark exciton levels, of which the decay rate becomes steeper as temperature rises. The energy gap between the lowest two excition levels was obtained by analyzing the dynamics of band edge emission with a model based on a three-level system. The model described well the dynamics of energy relaxation in the temperature regime up to 50 K. The emissions in the high temperature regime above 50 K exhibited both the initially populated carrier recombination and the surface-related emission.
机译:通过使用胶体化学方法制备形成纤锌矿结构的CdSe / ZnS纳米晶体(NCs),以研究带边缘发射的温度依赖性。 CdSe NCs的尺寸通过吸收测量获得的能带隙估算。在4 K至290 K的较宽温度范围内测量了PL光谱和时间分辨光谱。由于温度依赖性电子晶格相互作用和热膨胀,在该温度范围内的能带隙中发生了50 meV的红移。 。高达50 K的低温条件下的时间分辨谱显示了亮和暗激子能级之间的热平衡引起的边沿发射的单指数衰减,随着温度升高,其衰减率变得更陡。最低的两个激励水平之间的能隙是通过使用基于三级系统的模型分析带边缘发射的动力学来获得的。该模型很好地描述了高达50 K的温度范围内能量弛豫的动力学。高于50 K的高温范围内的发射物既表现出初始填充的载流子复合,也表现出与表面有关的发射。

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