Electrodeposition of In{sub}2 Se{sub]3 films from aqueous electrolyte containing both in and Se

摘要

We have prepared In{sub}2Se{sub}3 films on an ITO-glass substrate by room temperature electrodeposition from an aqueous electrolyte containing InCl{sub}3 and SeO{sub}2. The as-deposited film is of amorphous nature, while the annealed (at 673K in N{sub}2 atmosphere for 30min) shows a hexagonal γ phase. On annealing between 503 and 573 K, the film transforms to a new phase ofγ'- In{sub}2Se{sub}3. The band-gap (indirect allowed transition) energies of the amorphous, γ'- andγ- In{sub}2Se{sub}3 are determined as 1.45, 1.25 and 1.70eV, respectively.