Electrodeposition of In_2Se_3 Films from Aqueous Electrolyte Containing both In and Se

摘要

We have prepared In_2Se_3 films on an ITO-glass substrate by room temperature electrodeposition from an aqueous electrolyte containing InCl_3 and SeO_2. The as-deposited film is of amorphous nature, while the annealed (at 673K in N_2 atmosphere for 30min) shows a hexagonal #gamma# phase. On annealing between 503 and 573 K, the film transforms to a new phase of #gamma#'-In_2Se_3. The band-gap (indirect allowed transition) energies of the amorphous, #gamma#'- and #gamma#-In_2Se_3 are determined as 1.45, 1.25 and 1.70eV, respectively.