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High-Performance Single CdS Nanowire (Nanobelt) Schottky Junction Solar Cells with Au/Graphene Schottky Electrodes

机译:具有Au /石墨烯肖特基电极的高性能单CdS纳米线(纳米带)肖特基结太阳能电池

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摘要

High-performance single CdS nanowire (NW) as well as nanobek (NB) Schottky junction solar cells were fabricated. Au (5 nrn)/graphene combined layers were used as the Schottky contact electrodes to the NWs (NBs). Typical as-fabricated NW solar cell shows excellent photovoltaic behavior with an open circuit voltage of~0.15 V. a short circuit curreru of ~275.0 pA. and an energy conversion efficiency of up to ~1.65%. The physical mechanism of the combined Schottky electrode was discussed. We attribute the prominent capability of the devices to the high-performance Schottky combined electrode, which has the merits of low series resistance, high transparency, and good Schottky contact to the CdS NW(NB). Besides, a promising site-controllable patterned graphene transfer method, which has the advantages of economizing graphene material and free from additional etching process, was demonstrated in this work. Our results suggest that semiconductor NWs (NBs) are promising materials for novel solar cells, which have potential application in integrated nano-optoelectronic systems.
机译:制作了高性能单CdS纳米线(NW)以及nanobek(NB)肖特基结太阳能电池。 Au(5 nrn)/石墨烯组合层用作NW(NB)的肖特基接触电极。典型的预制NW太阳能电池具有出色的光伏性能,开路电压约为0.15V。短路电流约为275.0 pA。能量转换效率高达〜1.65%。讨论了组合肖特基电极的物理机理。我们将器件的杰出功能归功于高性能的肖特基复合电极,该电极具有低串联电阻,高透明性和与CdS NW(NB)良好的肖特基接触的优点。此外,该工作还证明了一种有前途的可控位置的图案化石墨烯转移方法,该方法具有节省石墨烯材料的优点,并且不需要额外的蚀刻工艺。我们的结果表明,半导体NW(NB)是新型太阳能电池的有前途的材料,在集成纳米光电系统中具有潜在的应用。

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