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Electrical and Optical Properties of Diketopyrrolopyrrole-Based Copolymer Interfaces in Thin Film Devices

机译:薄膜器件中基于二酮基吡咯并吡咯的共聚物界面的电学和光学性质

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摘要

Two donor-acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 x 10~(12)eV~(-1)cm~(-2)inTDPP-BBTand3.5 x 10 eV~(-1)cm~(-2) in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10~(-3) cm~2 /(V s). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.
机译:已经合成了两种基于供体-受体二酮吡咯并吡咯(DPP-BBT和TDPP-BBT)的共聚物,以用于有机器件,例如金属绝缘体半导体(MIS)二极管和场效应晶体管(FET)。用电容-电压和电导-电压方法对半导体-介电界面进行了表征。这些测量在TDPP-BBT中产生的界面陷阱密度为4.2 x 10〜(12)eV〜(-1)cm〜(-2),在PDPP-BBT中为3.5 x 10 eV〜(-1)cm〜(-2)在平带电压下。基于这些旋涂DPP共聚物的FET表现出p沟道行为,其空穴迁移率约为10〜(-3)cm〜2 / Vs。 PDPP-BBT FET的光散射研究表明,在允许器件在栅极电压下运行之后,拉曼光谱几乎没有变化,这表明FET由于受到金属-聚合物接触或施加电场的影响最小。作为比较,给出了并五苯FET中沟道-Au接触层的拉曼强度曲线,该曲线显示了偏置前后的明显变化。

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