Modified Conducting Polymer Hole Injection Layer for High-Efficiency Perovskite Light-Emitting Devices: Enhanced Hole Injection and Reduced Luminescence Quenching

摘要

Modification of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with sodium-poly(styrenesulfonate) leads to a ca. 0.3 eV increase in the work function and 15 times enhancement in the photoluminescence intensity of the overlying perovskite layer, which is closely correlated with the formation of a highly PSS-enriched top layer. As a direct result, the hybrid halide perovskite light-emitting devices with a modified PEDOT:PSS layer show the maximum external quantum efficiency of 7.2% and power efficiency of 19.0 lm W-1 which are 14-20 times those of the analogous devices using a pristine PEDOT:PSS layer and among the best reported values for the light-emitting devices using a neat perovskite emission layer. Our results illustrate that insufficient hole injection and luminescence quenching at the PEDOT:PSS anode are among the most important factors limiting the external quantum efficiencies of inverted perovskite light-emitting devices.