机译:界面工程可靠的HFO2突触模拟RRAM(Vol 7,PG 12682,2019)
Xi An Jiao Tong Univ Sch Elect Sci &
Engn Minist Educ Elect Mat Res Lab Key Lab Xian 710049 Shaanxi Peoples R China;
Xi An Jiao Tong Univ Sch Elect Sci &
Engn Minist Educ Elect Mat Res Lab Key Lab Xian 710049 Shaanxi Peoples R China;
Xi An Jiao Tong Univ Sch Elect Sci &
Engn Minist Educ Elect Mat Res Lab Key Lab Xian 710049 Shaanxi Peoples R China;
Xi An Jiao Tong Univ Sch Elect Sci &
Engn Minist Educ Elect Mat Res Lab Key Lab Xian 710049 Shaanxi Peoples R China;
Xi An Jiao Tong Univ Sch Elect Sci &
Engn Minist Educ Elect Mat Res Lab Key Lab Xian 710049 Shaanxi Peoples R China;
Xi An Jiao Tong Univ Sch Elect Sci &
Engn Minist Educ Elect Mat Res Lab Key Lab Xian 710049 Shaanxi Peoples R China;
Xi An Jiao Tong Univ Sch Elect Sci &
Engn Minist Educ Elect Mat Res Lab Key Lab Xian 710049 Shaanxi Peoples R China;
Xi An Jiao Tong Univ Sch Elect Sci &
Engn Minist Educ Elect Mat Res Lab Key Lab Xian 710049 Shaanxi Peoples R China;
Xi An Jiao Tong Univ Sch Elect Sci &
Engn Minist Educ Elect Mat Res Lab Key Lab Xian 710049 Shaanxi Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol State Key Lab Funct Mat Informat 865 Changning Rd Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol State Key Lab Funct Mat Informat 865 Changning Rd Shanghai 200050 Peoples R China;
Univ Calif Los Angeles Dept Mat Sci &
Engn Los Angeles CA 90095 USA;
Simon Fraser Univ Dept Chem Burnaby BC V5A 1S6 Canada;
IHP Leibniz Inst Innovat Mikroelekt Technol Pk 25 D-15236 Frankfurt Oder Germany;
Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys Shanghai 200083 Peoples R China;
Xi An Jiao Tong Univ Sch Elect Sci &
Engn Minist Educ Elect Mat Res Lab Key Lab Xian 710049 Shaanxi Peoples R China;
机译:界面工程可靠的HFO2突触模拟RRAM(Vol 7,PG 12682,2019)
机译:基于接口设计的可靠性HFO2的突触模拟RRAM
机译:朝着使用Al-Doped HFO2 RRAM的可靠突触模拟
机译:基于HfO2的超薄RRAM(UTO-RRAM)的性能和可靠性
机译:质子辐射对基于HfO2的RRAM的影响
机译:氮化处理基于HfO2的RRAM的导电机理和提高的耐力
机译:校正:基于接口设计的可靠性HFO2的突触模拟RRAM