High-performance vertical field-effect transistors based on all-inorganic perovskite microplatelets

摘要

All-inorganic halide perovskites have made significant achievements in electronics, optoelectronics, and other fields due to their unique physical and chemical properties. However, the researchers focus on the traditional planar field-effect transistors, which have limited electrical performance and applications due to their planar structure with a long channel length. Here, we report a vertical field-effect transistor (VFET) based on the CsPbBr(3)microplatelet grown by van der Waals epitaxial growth. The VFET is achieved by a direct evaporation method utilizing the height difference between the CsPbBr(3)single-crystal and the graphene substrate. Compared with the traditional planar structure transistors, the device exhibits more excellent performance, such as a high current density of 12.3 A cm(-2)and a high on/off ratio over 10(6)at room temperature. The trap-state density of the CsPbBr(3)single-crystal is calculated to be as low as 2.3 x 10(15)cm(-3)by space-charge-limited currents, which further proves its excellent crystallinity. Also, we have firstly fabricated a MoS2/CsPbBr(3)heterostructure inverter with a vertical structure, which could implement the "No" function in logic operations. This work opens a new pathway for practical application of all-inorganic halide perovskites in future electronics.