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BiVO4 based high k microwave dielectric materials: a review

机译:基于Bivo4高k微波介质材料:综述

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The BiVO4 material has attracted much attention in recent years due to its active photocatalytic properties under visible light, bright yellow color as a nontoxic pigment, and its high relative permittivity (epsilon(r)) and Qf (quality factor, Q x resonant frequency, f) as a potential microwave dielectric ceramic. In this review, we introduce the origin, synthesis, crystal structure and phase transitions of the four polymorphic phases of BiVO4: orthorhombic (pucherite), zircon (dreyerite), scheelite monoclinic (clinobisvanite) and scheelite tetragonal. We then precis recent studies on doped BiVO4 ceramics in terms of A site, B site and A/B site complex substitutions. Low sintering temperature (800 degrees C) and high epsilon(r) values could be obtained in some solid solution ceramics and near zero temperature coefficient of resonant frequency (TCF/(f)) values could be achieved in layered or granulated particle composite ceramics. Besides, a series of temperature stable high epsilon(r) microwave dielectric ceramics can also be obtained for many co-fired composite ceramics, such as BiVO4-TiO2, and BiVO4-TiO2-Bi2Ti4O11. The high epsilon(r), high Qf value, low sintering temperature and chemical compatibility with some base metals suggest that BiVO4-based materials are strong candidates for both LTCC and other microwave device applications in current 4G and future 5G technologies.
机译:近年来,Bivo4材料由于其在可见光下的活性光催化性质,亮黄色作为无毒颜料的高亮催化性,以及其高相对介电常数(epsilon)和qf(质量因子,q x谐振频率, f)作为潜在的微波介质陶瓷。在本文中,我们介绍了Bivo4的四种多态性阶段的起源,合成,晶体结构和相转移:正交(Pucherite),锆石(雷丝特),硅藻土单斜(ClinobiSvanite)和单抗体四方级。然后,我们最近关于掺杂BIVO4陶瓷的研究,就位点,B网站和A / B位点复合取代方面进行了掺杂的BIVO4陶瓷。低烧结温度(<800℃)和高ε(R)值可以在一些固溶陶瓷中获得,并且在分层或粒状颗粒复合材料中可以实现谐振频率的附近零温度系数(TCF /(F))值陶瓷。此外,还可以获得一系列温度稳定的高ε(R)微波介质陶瓷,用于许多共烧复合陶瓷,例如Bivo4-TiO 2和Bivo4-TiO2-Bi2Ti4O11。与一些基础金属的高ε(R),高QF值,低烧结温度和化学兼容性表明,基于BIVO4的材料是LTCC和其他微波器件应用中的强大候选者,包括当前4G和未来的5G技术。

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