首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites
【24h】

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

机译:基于SRTIO3纳米蛋白酶和聚乙烯吡咯烷酮复合材料的柔性非易失性电阻存储器件

获取原文
获取原文并翻译 | 示例
           

摘要

Strontium titanate (SrTiO3) ultra-thin-nanosheets with an average thickness of 3.1 +/- 0.2 nm have been synthesized via a solvothermal reaction route with ethylene glycol as the reaction medium solvent. The as-prepared SrTiO3 nanosheet and polyvinylpyrrolidone (PVP) (SrTiO3-PVP) composites were formed into large-scale high-integrity thin films on polyethylene terephthalate (PET) by using a spin-coating method. A flexible memory device with the configuration of Ag/SrTiO3-PVP/Pt/PET was fabricated and it showed a promising write-once read-many times memory effect with a high ON/OFF current ratio of more than 1.0 x 10(3), an ultralow switching voltage (0.17 V), good stability, good repeatability and flexibility. SrTiO3 nanosheets acting as trapping centers in the device play a significant role in the resistive switching mechanisms. We hope that the benefits of ultralow switching voltage and flexible characteristics will make this material promising for next generation nonvolatile functional memory applications.
机译:通过用乙二醇作为反应介质溶剂,通过具有乙二醇的溶剂热反应途径合成平均厚度为3.1 +/- 0.2nm的超薄纳米片。通过使用旋涂法将AS制备的SRTIO3纳米片和聚乙烯基吡咯烷酮(PVP)(SRTIO3-PVP)复合材料形成为聚对苯二甲酸乙二醇酯(PET)的大规模高完整性薄膜。制造具有AG / SRTIO3-PVP / PT / PT / PT / PT的配置的柔性存储器件,并显示了一个有前途的写入读取 - 多次存储器效果,高于/关闭电流比为1.0 x 10(3) ,超级开关电压(0.17 V),稳定性好,可重复性良好,灵活性。 SRTIO3纳米片作为装置中的诱捕中心在电阻切换机构中起着重要作用。我们希望超级开关电压和灵活特性的好处将使这种材料对下一代非易失性功能存储器应用有望。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号