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Defect-engineered MoS2 with extended photoluminescence lifetime for high-performance hydrogen evolution

机译:具有扩展光致发光的缺陷工程MOS2,用于高性能氢气进化

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摘要

It has been reported that defects in molybdenum disulfide (MoS2) enable the hydrogen evolution reaction (HER). The most widely employed method of argon-plasma treatment for defect generation suffers from poor material stability and loss of conductivity. Here, we report a new method to synthesize highly polycrystalline molybdenum disulfide MoS2 bilayers with enhanced HER performance and material stability. This new method is based on metal organic chemical vapor deposition (MOCVD) followed by UV/ozone treatment to generate defects. The defect densities on MoS2 were identified by the increase in lifetime (similar to 76%) and intensity (similar to 15%) in photoluminescence (PL) as compared to those of pristine MoS2. Our fabrication and characterization methods can be further applied to optimize defect densities for catalytic effects in various transition metal dichalcogenide (TMDC) materials.
机译:据报道,二硫化钼(MOS2)的缺陷使得氢进化反应(她)能够。 用于缺陷产生的最广泛采用的氩等离子体处理方法患有差的材料稳定性和导电性损失。 在这里,我们报告了一种新方法,用于合成高度多晶钼二硫化物MOS2双层,其具有增强的性能和材料稳定性。 这种新方法基于金属有机化学气相沉积(MOCVD),然后是UV /臭氧处理产生缺陷。 与原始MOS2相比,通过在光致发光(PL)中的寿命(类似于76%)和强度(类似于15%)的终身(类似于76%)和强度(类似于15%)来鉴定MOS2上的缺陷密度。 我们的制造和表征方法可以进一步应用于优化各种过渡金属二甲基(TMDC)材料中催化效应的缺陷密度。

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