NIR polymers and phototransistors

摘要

A novel bisthiophene-fused diketopyrrolopyrrole unit (4,11-bis(2-octyldodecyl)-7H,14H-thieno[3,2:7,8]indolizino[2,1-a]thieno[3,2-g]indolizine-7,14-dione, BTI) has been designed as an electron acceptor and used to copolymerize with thiophene and bithiophene as electron donors to construct two D-A conjugated polymers, P1 and P2via Stille coupling, respectively. The two polymers showed excellent thermal stability, broad light absorption and a narrow energy band gap. P1 and P2 were used to fabricate organic field-effect transistors (OFETs) to evaluate their charge transport characteristics. P2 showed much better hole transport performance with a mobility of 0.1 cm(2) V-1 s(-1). Near-infrared (NIR) phototransistors were also fabricated by using the two polymers blended with PC71BM as the active layer. With illumination of 35 W cm(-2) at a wavelength of 850 nm, the photocurrent/dark-current ratio (P) and photoresponsivity (R) of the phototransistor based on P1/PC71BM were 3.6 x 10(4) and 270 A W-1, respectively. For P2/PC71BM, P was 2.5 x 10(4) and R reached 2420 A W-1.