Performance Study of GCGS DG-MOSFETs for Asymmetric Doping and High K Oxide Material Using NQS Method

摘要

This work reported the analog and radio frequency performance for the Graded channel Gate stack double gate MOSFET structure for change in different high K oxide materials in the gate stack region. A wide comparison is established by considering the 2D TCAD simulator for change in doping concentration along the channel. This novel structure consists of gate stack engineering i.e. placing high- K layer over low-K region and non-uniform doping concentration to mitigate the SCEs and enhancing the performance of the existing devices. This novel device has the ability to suppressing the leakage currcnt due stack tcchniqucs, avoiding the bipolar parasitic effect due to graded channel and simultaneously achieving higher breakdown voltage and better analog and RF performances. Therefore this device needs to he studied thoroughly for non uniform doping and different high K oxide materials to he reliable for future applications. Different parameters related to analog performances, such as output resistance, intrinsic gain, early voltage and output arc studied. Similarly different RF parameters are also found out considering nonquasi-static (NQS) cffect by interchanging the doping concentration and high-K layer materials. The 2D Sentrausu TCAD software was considered for carrying out the simulations for the proposed dcvice with accurate validation. The result reveals that there is significant improvement on the performance of the proposed device for considering stack and graded channel techniques.