首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Photoluminescence and cathodoluminescence of spin coated ZnO films with different concentration of Eu3+ ions
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Photoluminescence and cathodoluminescence of spin coated ZnO films with different concentration of Eu3+ ions

机译:具有不同浓度Eu3 +离子的旋涂ZnO膜的光致发光和阴极致发光

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ZnO thin films doped with Eu3+ up to 4 mol% were successfully prepared using a sol-gel spin coating technique. The structure, morphology, chemical analysis and luminescence of the films were studied. X-ray photoelectron spectroscopy (XPS) analysis for the Eu 3d core shells confirmed the presence of divalent (Eu2+) and trivalent (Eu3+) states. Time of flight secondary ion mass spectroscopy showed that the Eu3+ ions were homogeneously distributed throughout the thin film with Eu2+ mainly only in the surface region of the thin films. The films exhibited ZnO exciton emission around 376 run, broad defect related emission and the Eu3+ characteristic emission simultaneously when excited at 325 nm. For the excitation at 464 nm, the doped samples exhibited only the characteristic emissions of Eu3+ which were attributed to the D-5(0)-F-7(J) (J = 0, 1, 2, 3, 4) transitions, respectively. The film with a 3 mol% of Eu3+ has emitted the highest photo/cathodoluminescence (PL/CL) emission. Therefore, it was subjected to electron beam irradiation in vacuum for about 22 h to establish the effect of the electron beam on the film's surface state, chemical and luminescence stability. Minor surface modification during electron beam irradiation was observed. The O 1s XPS peak revealed the creation of new defects associated with oxygen deficiencies due to the irradiation. Surface modification and creation of defects were identified as the major mechanisms for the initial decrease in the CL intensity. This film was very stable during prolonged electron beam irradiation.
机译:使用溶胶 - 凝胶旋涂技术成功制备掺杂有EU3 +至4mol%的ZnO薄膜。研究了薄膜的结构,形态,化学分析和发光。欧盟3D核心壳的X射线光电子能谱(XPS)分析证实了二价(EU2 +)和三价(EU3 +)状态的存在。飞行时间二次离子质谱表明,Eu3 +离子在整个薄膜中均匀地分布,其主要仅在薄膜的表面区域中。当在325nm兴奋时,薄膜在376次运行,宽缺陷相关发射和Eu3 +特征发射时显示出ZnO激子发射。对于464nm的激发,掺杂的样品仅表现出Eu3 +的特征排放,其归因于D-5(0)-F-7(J)(J = 0,1,2,3,4)过渡,分别。具有3摩尔%Eu3 +的薄膜发射了最高的照片/阴极发光(PL / CL)排放。因此,将电子束照射真空约22小时,以确定电子束对薄膜的表面状态,化学和发光稳定性的影响。观察到电子束照射期间的次要表面改性。 O 1S XPS峰揭示了由于照射而产生与氧气缺陷相关的新缺陷。缺陷的表面改性和创建被确定为CL强度初始减少的主要机制。在长时间电子束照射期间,该薄膜非常稳定。

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