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机译:多层MOS_2场效应晶体管的阈值电压控制通过十八烷基三氯硅烷及其应用于由增强模式逻辑门驱动的有源矩阵量子点显示的应用
Department of Electrical and Computer Engineering Inter-University Semiconductor Research Center Seoul National University 1 Gwanak-ro Gwanak-gu Seoul 08826 Republic of Korea;
Department of Electronic Engineering Incheon National University Academy-ro Yeongsu-gu Incheon 22012 Republic of Korea;
Department of Electrical and Computer Engineering Inter-University Semiconductor Research Center Seoul National University 1 Gwanak-ro Gwanak-gu Seoul 08826 Republic of Korea;
Department of Electrical and Computer Engineering Inter-University Semiconductor Research Center Seoul National University 1 Gwanak-ro Gwanak-gu Seoul 08826 Republic of Korea;
Department of Electronic Engineering Incheon National University Academy-ro Yeongsu-gu Incheon 22012 Republic of Korea;
Department of Electrical and Computer Engineering Inter-University Semiconductor Research Center Seoul National University 1 Gwanak-ro Gwanak-gu Seoul 08826 Republic of Korea;
Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea;
Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea;
Department of Chemistry Seoul National University 1 Gwanak-ro Gwanak-gu Seoul 08826 Republic of Korea;
SKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University Seobu-ro Jangan-gu Suwon-si 16419 Gyeonggi-do Republic of Korea;
Department of Electrical and Computer Engineering Inter-University Semiconductor Research Center Seoul National University 1 Gwanak-ro Gwanak-gu Seoul 08826 Republic of Korea;
Department of Electrical and Computer Engineering Inter-University Semiconductor Research Center Seoul National University 1 Gwanak-ro Gwanak-gu Seoul 08826 Republic of Korea;
Department of Electronic Engineering Incheon National University Academy-ro Yeongsu-gu Incheon 22012 Republic of Korea;
field-effect transistors; logic gate; MoS_2; quantum-dot light-emitting diode; threshold voltage control;
机译:多层MOS_2场效应晶体管的阈值电压控制通过十八烷基三氯硅烷及其应用于由增强模式逻辑门驱动的有源矩阵量子点显示的应用
机译:化学改性,田间效应晶体管和剪裁单层MOS_2纳米薄片的电压驱动旋转逻辑栅极
机译:双栅极MOS_2场效应晶体管,具有用于多功能逻辑电路的全范围可调阈值电压
机译:栅极电介质对MOS_2晶体管阈值电压的影响
机译:栅极平面化和铝栅极完全自对准的非晶硅薄膜晶体管,用于大面积和高分辨率有源矩阵液晶显示器(AMLCD)。
机译:具有铁电聚合物顶栅绝缘子的单壁碳纳米管晶体管的可控滞后和阈值电压
机译:场效应晶体管:多层MOS2场效应晶体管的阈值电压控制通过十八烷基氯硅烷及其应用于由增强模式逻辑门驱动的有源矩阵量子点显示器(小7/2019)
机译:多点室温下的阈值电压改善和栅极漏电流降低操作单电子晶体管(RT-sET)