Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1-xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology

摘要

Integrated heterostructures exhibiting a nanocolumnar morphology of the InxGa1 -xN film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of InxGa1 -xN nanocolumns on the por-Si buffer layer offer a number of advantages over growth on the c-Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the InxGa1 -xN layer. The growth of InxGa1 -xN nanocolumns on the por-Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por-Si buffer layer is 25% higher than the emission intensity for the film grown on the c-Si substrate.