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Growth of crystals in presence of impurities. A hypothesis based on a kinetic approach

机译:在杂质存在下晶体的生长。基于动力学方法的假设

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A hypothesis is proposed concerning the growth of crystals in the presence of impurities soluble in the parent phase but insoluble in the crystal. The hypothesis is based on: (i) a kinetic model developed by Bliznakov, where it is assumed that the impurity layers exert a passive resistance towards the growth of crystals, (ii) results obtained by Kaischew concerning the nucleation of crystals on. foreign substrate; according to which the heterogeneous nucleation is more favourable than the homogeneous one, in the presence of the same supersaturation, and (iii) a statement of Distler and co-workers that a foreign intermediate layer contains "single crystal" structural information about the crystal face where the layer has been formed. [References: 9]
机译:提出了关于在可溶于母相但不溶于晶体的杂质存在下晶体生长的假设。该假设基于:(i)Bliznakov开发的动力学模型,其中假设杂质层对晶体的生长产生被动阻力,(ii)Kaischew获得的有关晶体核化的结果。异物根据这种方法,在存在相同的过饱和度的情况下,异质形核比均质形核更有利;并且(iii)Distler和同事的说法是,外来中间层包含有关晶面的“单晶”结构信息层已形成的位置。 [参考:9]

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