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Modeling the effect of dislocation density on the strength statistics in nanoindentation

机译:模拟脱位密度对纳米狭窄强度统计的影响

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High variability in material strength is observed when the characteristic length scale of the specimen or stressed region approaches the mean dislocation spacing. However, few efforts have been made, either through experimentation or simulation, to quantify the distributions of material strength in this regime. In the present work, we investigate the effect of dislocation density on the statistical distribution of the critical indenter force required to initiate plasticity in nanoindentation. By coupling discrete dislocation dynamics with the finite element method, we are able to quantify the effect of initial dislocation density, rho(o), on both the mean and standard deviation of the critical force. Our results suggest a rho(-1/2)(o) power law scaling for both the mean and standard deviation.
机译:当样品或应力区域的特征长度达到平均位错间距时,观察到材料强度的高变异性。 然而,通过实验或模拟,已经通过了很少的努力来量化本制度的材料强度分布。 在目前的工作中,我们研究了位错密度对引发纳米内狭窄可塑性所需的临界压痕的统计分布的影响。 通过用有限元方法耦合离散位错动态,我们能够量化初始位错密度,rho(o),rho(o)在临界力的平均值和标准偏差的效果。 我们的结果表明了平均值和标准偏差的RHO(-1/2)(O)电力法规。

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