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首页> 外文期刊>Modern Physics Letters, B. Condensed Matter Physics, Statistical Physics, Applied Physics >Defect formation processes in the silicon nanoparticles under the neutron irradiation
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Defect formation processes in the silicon nanoparticles under the neutron irradiation

机译:中子辐射下硅纳米颗粒中的缺陷形成过程

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Silicon nanoparticles have been irradiated by neutrons up to 20 h. Free electrons and defects in the nanosilicon particles have been comparatively investigated before and after neutron irradiation using electron paramagnetic resonance (EPR) method. The neutron scattering and capture cross-section processes have been calculated for natural Si-28(14), Si-29(14), Si-30(14) isotopes, which are main part of nanosilicon samples when irradiated for 20 h by epithermal neutrons. Particle size, agglomeration and other surface effects of silicon nanoparticles were studied with scanning electron microscope (SEM) before and after neutron irradiation.
机译:通过高达20小时的中子照射硅纳米颗粒。 使用电子顺磁共振(EPR)方法之前和之后的中子辐射之前和之后的纳米硅颗粒中的游离电子和缺陷已经相对调查。 已经计算了中子散射和捕获横截面工艺,用于天然Si-28(14),Si-29(14),Si-30(14)同位素,其是纳米硅样品的主要部分,当通过骨头照射20小时 中子。 在中子辐射之前和之后,使用扫描电子显微镜(SEM)研究了硅纳米颗粒的粒度,聚集和其他表面效果。

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