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机译:过渡金属元素X(X = Mn,Fe,Co,Co,Co和Ni)对Zno电阻存储器性能的影响
Hebei Normal Univ Coll Phys Sci &
Informat Engn Key Lab Adv Films Hebei Prov Shijiazhuang 050024 Hebei Peoples R China;
Hebei Normal Univ Coll Phys Sci &
Informat Engn Key Lab Adv Films Hebei Prov Shijiazhuang 050024 Hebei Peoples R China;
Hebei Normal Univ Coll Phys Sci &
Informat Engn Key Lab Adv Films Hebei Prov Shijiazhuang 050024 Hebei Peoples R China;
Hebei Normal Univ Coll Phys Sci &
Informat Engn Key Lab Adv Films Hebei Prov Shijiazhuang 050024 Hebei Peoples R China;
Hebei Normal Univ Coll Phys Sci &
Informat Engn Key Lab Adv Films Hebei Prov Shijiazhuang 050024 Hebei Peoples R China;
resistance random access memory; doping; ZnO; first principle calculations;
机译:过渡金属元素X(X = Mn,Fe,Co,Co,Co和Ni)对Zno电阻存储器性能的影响
机译:两种相同的3D过渡 - 金属原子M掺杂(M?=ΔV,Cr,Mn,Fe,Co,Co和Ni)的影响ZnO的结构,电子和磁性
机译:Mn-Ni-Nb-Sn形状记忆合金的马氏体相变和磁热效应:4d过渡金属掺杂的影响
机译:过渡金属(CO,Ni,Mn)掺杂ZnO薄膜的光响应研究
机译:离散过渡金属(Ni,Co,Fe,Mn)磷酸盐纳米颗粒的合成:组成对催化和磁性的影响
机译:溶胶-凝胶法合成掺杂过渡金属(Ag和Ni)的ZnO纳米材料的光催化活性比较研究
机译:合金元素对Mn-Mo-Ni低合金钢碱基金属转变温度区断裂韧性的影响
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。