...
机译:没有负光刻胶的光敏聚酰亚胺(PSPI)的制备及其对集成电路(IC)的光刻绝缘图案(嘴唇)的可行评价
Department of Chemical Engineering National Tsing Hua University;
Department of Textile Engineering Chinese Culture University;
Department of Chemical Engineering National Tsing Hua University;
Material and Chemical Research Laboratories Industrial Technology Research Institute;
Material and Chemical Research Laboratories Industrial Technology Research Institute;
Material and Chemical Research Laboratories Industrial Technology Research Institute;
Material and Chemical Research Laboratories Industrial Technology Research Institute;
Material and Chemical Research Laboratories Industrial Technology Research Institute;
Material and Chemical Research Laboratories Industrial Technology Research Institute;
Photosensitive polyimide; Lithographic; Integrated circuit; Insulation pattern; Negative photoresist;
机译:没有负光刻胶的光敏聚酰亚胺(PSPI)的制备及其对集成电路(IC)的光刻绝缘图案(嘴唇)的可行评价
机译:使用光敏聚酰亚胺绝缘层的超导集成电路制造约瑟夫森隧道结的新工艺
机译:使用光敏聚酰亚胺绝缘层的超导集成电路制造约瑟夫森隧道结的新工艺
机译:没有侧链的光敏聚酰亚胺:负色调反应开发图案
机译:i-line和DUV光刻胶的光刻性能及其在先进集成电路技术中的应用。对苯二甲酸二辛酯(5-)作为细胞外空间标记物和NMR移位试剂,用于定量测定组织。人工湿地中铬(IV)的化学性质。
机译:芳基环氧热固性树脂的光刻性能作为微光学的阴性光致抗蚀剂
机译:马来酰亚胺化合物对基于阴性反应开发图案的光敏聚酰亚胺图案形成性能