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首页> 外文期刊>Materials science in semiconductor processing >Pristine NiCo2O4 nanorods loaded rGO electrode as a remarkable electrode material for asymmetric supercapacitors
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Pristine NiCo2O4 nanorods loaded rGO electrode as a remarkable electrode material for asymmetric supercapacitors

机译:原始Nico2O4纳米杆装载RGO电极作为非对称超级电容器的显着电极材料

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摘要

In this work, NiCo(2)O(4 )nanomds and rGO supported NiCo2O4 (NiCo2O4/rGO) are synthesized. The samples are evaluated by XRD, Raman, XPS, SEM, TEM, CV, EIS, and galvanostatic charge/discharge. The charge transfer resistance of NiCo2O4/rGO obtains 7.59 Omega, which is 7.6 times lower than that of NiCo2O4 (57.5 5 Omega). Also, the specific capacity of NiCo2O4/rGO hybrid found to be 63.2 mAh g(-1) at discharge current density of 0.5 mA cm(-2). The high specific surface area of rGO and the electrostatic interactions between rGO and NiCo2O4 enhance the electroactive sites of material and increase the specific capacitive and energy storage. NiCo2O4/rGO exhibits excellent charge storage and high rate capability with 55% capacitive retention at 4 mA cm(-2). Both specific surface area of rGO and specific nanorod morphology of NiCo2O4 contribute significantly to the high electrochemical performance of NiCo2O4/rGO for energy storage.
机译:在这项工作中,合成了Nico(2)O(4)纳米DD和RGO支持的NicO2O4(Nico2O4 / Rgo)。 样品由XRD,拉曼,XPS,SEM,TEM,CV,EIS和GALVANOTATIC CHAST /放电评估。 NicO2O4 / Rgo的电荷转移抗性获得7.59Ω,比Nico2O4(57.5 5Ω)低7.6倍。 此外,在放电电流密度为0.5mA cm(-2)的情况下,发现NicO 2 O 4 / Rgo杂种的比容量为63.2mAhg(-1)。 RGO的高比表面积和RGO与NiCO2O4之间的静电相互作用增强了材料的电活性位点并增加了比电容和能量储存。 Nico2O4 / Rgo具有优异的电荷储存和高速率能力,在4 mA cm(-2)时具有55%的电容滞留。 Nico2O4的RGO的比表面积和特异性纳米杆形态的两种表面积显着贡献了Nico2O4 / Rgo的高电化学性能,用于储能。

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