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Evaluation of titanium carbide thin film coatings on WC-Co following surface microstructure treatments

机译:碳化钛薄膜涂层对WC-Co后表面微结构处理的评价

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The effects of acid or radio-frequency (RF) CF4 plasma pre-treatments before a sputtered titanium carbide (TiC) hard coating thin film were investigated to increase the adhesion strength of TiC on WC-16wt%Co substrate. The arithmetic average roughness (Ra) was 182.5nm after a 5-min aqua regia treatment at 60 degrees C and 247.8nm after 30min of RF CF4 plasma at a substrate temperature of 500 degrees C. Chemically bonded cobalt disappeared from the WC-Co substrate surface on treatment with aqua regia for 5min based on X-ray photoelectron spectroscopy (XPS). The TiC thin film on substrate with Ra=150.3nm after CF4 plasma treatment at 300 degrees C for 30min did not delaminate at up to 30N, in contrast, the substrate with Ra=182.5nm after aqua regia treatment at 60 degrees C for 5min underwent delamination at below 30N. The adhesion strength was maximal, with a surface roughness of Ra approximate to 150nm, with CF4 and aqua regia treatments.
机译:研究了酸或射频(RF)CF4等离子体预处理在溅射碳化钛(TIC)硬涂层薄膜之前的影响,以提高TIC对WC-16wt%CO衬底的粘合强度。 在50摄氏度的5min CF4等离子体30℃和247.8nm处在500℃的底物温度下30min CF4等离子体后,在60℃和247.8nm后,算术平均粗糙度(Ra)为182.5nm。在500℃的底物温度下。从WC-Co底物中消失了化学键合的钴 基于X射线光电子体光谱法(XPS)的5分钟治疗方法。 在300摄氏度下CF4等离子体处理后,在300摄氏度下进行300min后,薄膜在300℃下进行缩分数,相反,在60摄氏度下治疗5min后,用Ra = 182.5nm的基材在60摄氏度下进行分化。 分层在30℃以下。 粘合强度是最大的,RA的表面粗糙度近似为150nm,CF4和AQUA Regia治疗。

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