A novel double-pi model for multilayer inductor based on 130 nm SiGe process and modified parameter extraction procedure

摘要

In this article, a multilayer inductor for millimeter-wave regime was fabricated based on 130 nm SiGe process with compact size and high quality factor (Q). The area of cross-section for the proposed inductor is 40m40m and the highest Q value is 14 at millimeter-wave regime. We present a novel double- equivalent circuit and a modified parameter extraction method to characterize the multilayer inductor with excellent accuracy over a broad-band frequency up to 110 GHz. To improve the accuracy of circuit model of the multi-layer inductor, mutual coupling between different layers is introduced into the conventional double-pi model. Equivalent circuit parameters can be extracted from two-port S-parameters by utilizing the modified simple parameter extraction methodology. Simulation and measured results validate the validity of double-pi model and parameter extraction methodology with good accuracy.