AC and DC caracteristics of simulated Doped Graphene Field Effect Transistor (GFET) Frequency Multipliyer

摘要

The presented work demonstrates the simulation of Graphene Transistor. Graphene filed effect transistor can be operated at high-frequency. The material parameters for device simulation have been extracted from the recently published literature. The device carrier transport calculations are performed with semiclassical Boltzmann transport models along with Poisson equations. The current-voltage characteristics analyzed and performance of the device is evaluated. Device parameters of the graphene radio frequency transistor have been extracted. The equivalent circuit has been built with passive components by using general purpose PSpice circuit simulator. Then the equivalent circuit performance is analyzed for a given input frequency.