Infrared detection and photon energy up-conversion in graphene layer infrared photodetectors integrated with LEDs based on van der Waals heterostructures: Concept, device model, and characteristics

摘要

Abstract We propose the concept of the infrared detection and photon energy up-conversion in the devices using the integration of the graphene layer infrared detectors (GLIPs) and the light emitting diodes (LEDs) based on van der Waals (vdW) heterostructures. Using the developed device model of the GLIP-LEDs, we calculate their characteristics. The GLIP-LED devices can operate as the detectors of far- and mid infrared radiation (FIR and MIR) with an electrical output or with near-infrared radiation (NIR) or visible radiation (VIR) output. In the latter case, GLIP-LED devices function as the photon energy up-converters of FIR and MIR to NIR or VIR. The operation of GLIP-LED devices is associated with the injection of the electron photocurrent produced due to the interband absorption of the FIR/MIR photons in the GLIP part into the LED emitting NIR/VIR photons. We calculate the GLIP-LED responsivity and up-conversion efficiency as functions the structure parameters and the energies of the incident FIR/MIR photons and the output NIR/VIR photons. The advantages of the GLs in the vdW heterostructures (relatively high photoexcitation rate from and low capture efficiency into GLs) combined with the reabsorption of a fraction of the NIR/FIR photon flux in the GLIP (which can enable an effective photonic feedback) result in the elevated GLIP-LED device responsivity and up-conversion efficiency. The positive optical feedback from the LED section of the device lead to increasing current injection enabling the appearance of the S-type current-voltage characteristic with a greatly enhanced responsivity near the switching point and current filamentation. ]]>