机译:L
Department of Electronics and Communication Engineering SNS College of Technology;
Department of Electronics and Communication Engineering SNS College of Technology;
Department of Electronics and Communication Engineering Karunya Institute of Technology and Sciences;
Department of Electronics and Communication Engineering Karunya Institute of Technology and Sciences;
Department of Electronics and Communication Engineering Karunya Institute of Technology and Sciences;
Department of Electronics and Communication Engineering Karunya Institute of Technology and Sciences;
Access resistance; Breakdown voltage; DC-RF characteristics; GaAs MHEMT; Maximum stable gain;
机译:L
机译:L
机译:L_g = 20 nm新型不对称InP HEMT的击穿性能研究,用于未来的高速大功率应用
机译:层间不对称应力对外延Pr
机译:高掺杂P型GaAs上表面声波的产生和增强及其光电应用
机译:千年来的性传播感染。过去现在和未来。 2000年5月3日至7日在美国马里兰州巴尔的摩举行的会议的报告性交通信息2000年; 76:218-219
机译:四层石墨烯纳米片与具有不对称Al