Specific Features of the Formation of Dislocation Structure in Gallium Arsenide Single Crystals Obtained by the Czochralski Method

摘要

The influence of the deviation of seed orientation from the [100] direction on the formation of a dislocation structure of gallium arsenide single crystals grown by the Czochralski method has been revealed. The intensive multiplication of dislocations and formation of a block structure occur at deviation by an angle of more than 3A degrees in the region that is radially shifted to one of crystal sides. The linear density of dislocations in the walls changes from 1 x 10(4) cm(-1) in low-angle boundaries to 6 x 10(4) cm(-1) in subboundaries.