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Controlled growth of a nanoplatelet-structured copper sulfide thin film as a highly efficient counter electrode for quantum dot-sensitized solar cells

机译:作为量子点敏化太阳能电池的高效对电极,控制纳米克塞特塞型硫化铜薄膜的生长

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摘要

An ideal counter electrode (CE), with high-level electrocatalytic activity, high performance stability, and applicable fabrication simplicity, is significant to convey the advantages of quantum-dot-sensitized solar cells (QDSSCs). We report CuS nanoplatelets that are cohered on a conductive FTO substrate using an inexpensive and facile one-step low-temperature chemical bath deposition technique with different concentrations of acetic acid and can be employed as CE without any post-treatments for QDSSCs. The acetic acid affects the morphology, density of nanostructure, thickness, and Cu vacancies with increased S composition of CuS. The TiO2/CdS/CdSe/ZnS QDSSC with the optimized CuS CE under one sun illumination (AM 1.5G, 100 mW cm(-2)) exhibits an energy conversion efficiency (eta) of 5.15%, which is higher than that of a platinum (Pt) CE (1.25%). This enhancement is mainly attributed to the optimized CuS nanostructure, which exhibits a lower charge transfer resistance (7.89 Omega) at the interface of the CE/electrolyte and superior electrochemical catalytic ability. A preliminary stability test reveals that the CuS CE exhibits good stability with no degradation for 20 h. Therefore, the easily prepared CuS is very promising as a stable and efficient CE for QDSSCs.
机译:具有高水平电催化活性,高性能稳定性和适用的制造简单的理想对电极(CE)是显着的,这对于传达量子点敏化太阳能电池(QDSSCs)的优点很重要。我们报告了使用具有不同浓度的乙酸的廉价且化的一步低温化学浴沉积技术在导电FTO基板上缔结的CUS纳米孔塔塔纳薄物质,并且可以用作QDSSC的任何后处理的CE。乙酸影响纳米结构,厚度和Cu空位的形态,纳米结构较高的CU。 TiO2 / CDS / CDSE / ZnS QDSSC具有优化的CUS CE在一个太阳照明(AM 1.5G,100mW cm(-2))上表现出5.15%的能量转换效率(ETA),其高于a铂(PT)CE(1.25%)。这种增强主要归因于优化的CU纳米结构,其在Ce /电解质的界面和优异的电化学催化能力下表现出较低的电荷转移电阻(7.89ω)。初步稳定性试验显示CUS CE表现出良好的稳定性,没有降解20小时。因此,易于准备的CU是非常有前途的QDSSCS的稳定和有效的CE。

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  • 来源
    《RSC Advances》 |2016年第51期|共10页
  • 作者单位

    Pusan Natl Univ Sch Elect Engn Busandaehak Ro 63 Beon Gil Busan 46241 South Korea;

    Pusan Natl Univ Sch Elect Engn Busandaehak Ro 63 Beon Gil Busan 46241 South Korea;

    Pusan Natl Univ Sch Elect Engn Busandaehak Ro 63 Beon Gil Busan 46241 South Korea;

    Pusan Natl Univ Sch Elect Engn Busandaehak Ro 63 Beon Gil Busan 46241 South Korea;

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  • 正文语种 eng
  • 中图分类 化学;
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