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Nontrivial topology of bulk HgSe from the study of cyclotron effective mass, electron mobility and phase shift of Shubnikov-de Haas oscillations

机译:来自回旋加速器有效质量,电子移动性和Shubnikov-de HAAS振荡的电子迁移和相移的非批量拓扑

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In this paper, the authors report the results of an experimental study of effective mass, electron mobility and phase shift of Shubnikov-de Haas oscillations of transverse magnetoresistance in an extended electron concentration region from 8.8 x 10(15) cm(-3) to 4.3 x 10(18) cm(-3) in single crystals of mercury selenide. The revealed features indicate that Weyl semimetal phase may exist in HgSe at low electron density. The most significant result is the discovery of an abrupt change of Berry phase approximate to pi at electron concentration approximate to 2 x 10(18) cm(-3), which we explain in terms of a manifestation of topological Lifshitz transition in HgSe that occurs by tuning Fermi energy via doping.
机译:在本文中,作者报告了横向磁阻的有效质量,电子迁移和相移的实验研究结果,在延伸的电子浓度区域到8.8×10(15)cm(-3)中的横向磁阻中的横向磁阻的横向磁阻的实验研究 4.3×10(18)厘米(-3)单晶硒化晶体。 揭示的特征表明,在低电子密度的Hgse中可以存在于半型阶段。 最重要的结果是发现浆果相的突然变化近似于电子浓度近似为2×10(18)厘米(-3),我们就拓扑Lifshitz过渡在发生的拓扑Lifshitz过渡的表现而言 通过掺杂调整费米能量。

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