Reduced contact resistance of a-IGZO thin film transistors with inkjet-printed silver electrodes

摘要

In this study, high performance amorphous In-Ga-Zn-O (a-IGZO) TFTs were successfully fabricated with inkjet-printed silver source-drain electrodes. The results showed that increased channel thickness has an improving trend in the properties of TFTs due to the decreased contact resistance. Compared with sputtered silver TFTs, devices with printed silver electrodes were more sensitive to the thickness of active layer. Furthermore, the devices with optimized active layer showed high performances with a maximum saturation mobility of 8.73 cm(2) . V-1 . S-1 and an average saturation mobility of 6.97 cm(2) . V-1 . S-1, I-on/I-off ratio more than 10(7) and subthreshold swing of 0.28 V/decade, which were comparable with the analogous devices with sputtered electrodes.