High performance and mechanism of the resistive switching device based on lead halide thin films

摘要

In this work, the lead halide was firstly applied in resistive random-access memory (RRAM) device with the structure of W/lead iodide/fluorine-doped tin oxide. The mechanism was investigated by reliable data fitting and the experiment of temperature influence, illustrating that the resistive switching phenomenon was origin from the filament. The iodide vacancies were considered as the main composition of the conductive filaments, which was verified by the first principle calculation and experimental verification. These performances were also found in devices fabricated by other lead halide, such as PbBr2 and PbCl2. Moreover, they performed great potential as the non-volatile memory due to the excellent resistive switching properties. This work was of great significance for the expansion of RRAM material system.