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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Carrier confinement effects observed in the normal-state electrical transport of electron-doped cuprate trilayers
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Carrier confinement effects observed in the normal-state electrical transport of electron-doped cuprate trilayers

机译:在电子掺杂的铜替换三层铜的正常状态电气传输中观察到的载波限制效应

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摘要

SrCuO2/Sr0.9La0.1CuO2/SrCuO2 trilayers were grown by oxide-molecular beam epitaxy. The thicknesses of the top and bottom SrCuO2 layers were fixed, while the thickness of the infinite-layer electron-doped cuprate Sr0.9La0.1CuO2 central layer was systematically changed. Transmission electron microscopy, x-ray reflectivity and x-ray diffraction measurements were performed to assess the sample quality and the abruptness of the interfaces. Electrical transport measurements as a function of temperature and as a function of central layer thickness, confirm that the normal state properties of the trilayers are altered by the confinement of the charge carriers in the central layer.
机译:SRCUO2 / SR0.9LA0.1CuO2 / Srcuo2三层均通过氧化物分子束外延生长。 固定顶部和底部SRCUO2层的厚度,而无限层电子掺杂的铜酸铜SR0.9LA0.1CuO2中央层的厚度被系统地改变。 进行透射电子显微镜,进行X射线反射率和X射线衍射测量以评估界面的样品质量和突然性。 电气传输测量作为温度的函数和作为中心层厚度的函数,确认通过中央层中的电荷载体的限制来改变三层的正常状态特性。

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